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  unisonic technologies co., ltd utt80n06 preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2010 unisonic technologies co., ltd ver.a 60v, 80 a n-channel power mosfet ? description the utc utt80n06 is an n-channel enhancement mode power mosfet using utc?s advanced tech nology to provide customers with a minimum on-state resistance and high switching speed. it can also withstand high energy pluse in the avalanche and commutation mode. the utc utt80n06 is suitable for active power factor correction, high efficient switched mode power supplies and electronic lamp ballast based on half bridge topology, etc. ? features * r ds(on) < 10m ? @ v gs =10v * high switching speed * improved dv/dt capability * low crss(typical 145pf) * low gate charge(typical 57nc) ? symbol 1.gate 2.drain 3.source ? ordering information ordering number package pin assignment packing lead free halogen free 12345 6 7 8 utt80n06l-ta3-t utt80n06g-ta3-t to-220 g d s - - - - - tube utt80n06l-tq2-t utt80n06g-tq2-t to-263 g d s - - - - - tube utt80n06l-tq2-r utt80n06g-tq2-r to-263 g d s - - - - - tape reel UTT80N06L-S08-R utt80n06g-s08-r sop-8 s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
utt80n06 preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-706.c ? marking information package marking to-220 to-263 sop-8
utt80n06 preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-706.c ? absolute maximum ratings (t c = 25c, unless otherwise specified) (note 2) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current continuous t c =25c i d 80 a t c =100c 65 a pulsed (note 3) i dm 320 a avalanche current (note 3) i ar 80 a avalanche energy single pulsed (note 4) e as 480 mj repetitive (note3) e ar 17.6 mj power dissipation to-220/to-263 p d 147 w sop-8 5.2 junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. drain current limited by maximum junction temperature 3. repetitive rating: pulse width limit ed by maximum junction temperature 4. l =0.15mh, i as = 80a, v dd = 50v, r g = 25 ? , starting t j = 25c 5. i sd 80a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient to-220/to-263 ja 62.5 c/w sop-8 110 junction to case to-220/to-263 jc 0.85 c/w sop-8 24
utt80n06 preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-706.c ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v, t j =25c 60 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 0.075 v/c drain-source leakage current i dss v ds =60v, v gs =0v 1 a v ds =48v, t c =150c 10 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =40a 8.5 10 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 2450 3190 pf output capacitance c oss 910 1190 pf reverse transfer capacitance c rss 145 190 pf switching parameters total gate charge at 10v q g ( tot ) v gs =10v, v ds =48v, i d =80a (note 1, 2) 57 74 nc gate to source charge q gs 15 nc gate to drain charge q gd 24 nc turn-on delay time t d ( on ) v dd =30v, i d =80a, r g =25 ? (note 1, 2) 32 75 ns rise time t r 259 528 ns turn-off delay time t d ( off ) 136 282 ns fall-time t f 113 236 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 80 a maximum body-diode pulsed current i sm 320 a drain-source diode forward voltage v sd i s =80a, v gs =0v 1.4 v notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operati ng temperature typical characteristics
utt80n06 preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-706.c ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
utt80n06 preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-706.c ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
utt80n06 preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-706.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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